Dynamic Susceptibility in Thin Films with Antiferromagnetic Coupling between Layers
نویسندگان
چکیده
منابع مشابه
Strain-induced ferromagnetism in antiferromagnetic LuMnO3 thin films.
Single phase and strained LuMnO(3) thin films are discovered to display coexisting ferromagnetic and antiferromagnetic orders. A large moment ferromagnetism (≈1μ(B)), which is absent in bulk samples, is shown to display a magnetic moment distribution that is peaked at the highly strained substrate-film interface. We further show that the strain-induced ferromagnetism and the antiferromagnetic o...
متن کاملObservation of antiferromagnetic domains in epitaxial thin films
Antiferromagnetic domains in an epitaxial thin film, LaFeO(3) on SrTiO(3)(100), were observed using a high-spatial-resolution photoelectron emission microscope with contrast generated by the large x-ray magnetic linear dichroism effect at the multiplet-split L edge of Fe. The antiferromagnetic domains are linked to 90 degrees twinned crystallographic regions in the film. The Neel temperature of...
متن کاملObservation of antiferromagnetic coupling in epitaxial ferrite films
Defects in ferrite can change the local magnetic coupling from ferromagnetic to strongly antiferromagnetic. In eptiaxial magnetite Fe3O4 films, defects locally altering exchange interaction, i.e., “antiphase boundaries” APB , essentially determine magnetic and magnetotransport properties. We locally observed specific magnetization reversal events in epitaxial magnetite Fe3− O4/MgO films 0.03 by...
متن کاملExciton-phonon coupling in diindenoperylene thin films
U. Heinemeyer,1 R. Scholz,2 L. Gisslén,2 M. I. Alonso,3 J. O. Ossó,3,4 M. Garriga,3 A. Hinderhofer,1 M. Kytka,1,5 S. Kowarik,1 A. Gerlach,1 and F. Schreiber1,* 1Institut für Angewandte Physik, Auf der Morgenstelle 10, 72076 Tübingen, Germany 2Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, D-85748 Garching, Germany 3Institut de Ciència de Materials de Barcelona—CSIC,...
متن کاملDielectric properties of ferroelectric thin films with surface transition layers.
By taking into account surface transition layers (STL), the dielectric properties of ferroelectric thin films described by the transverse Ising model are discussed in the framework of the mean field approximation. Functions of the intra-layer and inter-layer couplings are introduced to characterize STL, which makes the model more realistic compared to previous treatment of surface layers using ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 1996
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.90.1215